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    STEVAL-G1407LBCB

    Evaluation board for half-bridge with SGT140R70ILB, 106 mOhm typ., 17 A e-mode PowerGaN transistor

    Parameters
    Operating RangeIndustrial
    Core ProductSTGAP2GSNCTR, SGT140R70ILB
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameCARD
    Description

    The STEVAL-G1407LBCB is designed for evaluating the electrical and thermal characteristics of the SGT140R70ILB 700-V e-mode PowerGaN transistor using the isolated gate driver STGAP2GSN.The half-bridge configuration enables the emulation of buck, boost, PFC, and inverter topologies with a dedicated...
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    Key features
    Key features
    • Half-bridge topology featuring 630 V peak voltage
    • Equipped with 700 V, 106 mΩ typ., 17 A, e-mode PowerGaN transistor
    • Bottom solder mask aperture for high heat-sink performance
    • 10°C/W junction-to-heatsink thermal resistance to evaluate large power topologies
    • -3.0 VCC/+6.2 VCC gate driver supply voltage
    • On-board adjustable deadtime generator to convert single PWM signals into independent high-side and Low-Side signals with deadtimes from 10 to 150 ns
    • Dedicated input connector for external deadtime PWM
    • Up to 1 MHz switching frequency operation
    • MMCX high frequency connector for high-side GaN gate voltage measurement
    • 5.08 mm pitch for GaN drain-source voltage monitoring
    • Optional low-side shunt for transistor source current monitoring
    Coming Soon
    Parameters
    Operating RangeIndustrial
    Core ProductSTGAP2GSNCTR, SGT140R70ILB
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameCARD
    Description

    The STEVAL-G1407LBCB is designed for evaluating the electrical and thermal characteristics of the SGT140R70ILB 700-V e-mode PowerGaN transistor using the isolated gate driver STGAP2GSN.The half-bridge configuration enables the emulation of buck, boost, PFC, and inverter topologies with a dedicated...
    Read More

    Key features
    Key features
    • Half-bridge topology featuring 630 V peak voltage
    • Equipped with 700 V, 106 mΩ typ., 17 A, e-mode PowerGaN transistor
    • Bottom solder mask aperture for high heat-sink performance
    • 10°C/W junction-to-heatsink thermal resistance to evaluate large power topologies
    • -3.0 VCC/+6.2 VCC gate driver supply voltage
    • On-board adjustable deadtime generator to convert single PWM signals into independent high-side and Low-Side signals with deadtimes from 10 to 150 ns
    • Dedicated input connector for external deadtime PWM
    • Up to 1 MHz switching frequency operation
    • MMCX high frequency connector for high-side GaN gate voltage measurement
    • 5.08 mm pitch for GaN drain-source voltage monitoring
    • Optional low-side shunt for transistor source current monitoring