STFH40N60M2

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N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP wide crepage package

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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220FP wide creepage

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.


The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

Key features
  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected
  • Wide creepage distance of 4.25 mm between the pins