STG10M65F2D7

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Trench gate field-stop, 650 V, 10 A, low-loss M series IGBT die in D7 packing

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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT
Key features
  • 6 μs of short-circuit withstand time
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 10 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C