STG10M65F2D7 Active

Trench gate field-stop, 650 V, 10 A, low-loss M series IGBT die in D7 packing
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT
Key Features
  • 6 μs of short-circuit withstand time
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 10 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

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