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STG15M120F3D8

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1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D8 packing

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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameDICE SAWN T&R

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key features
  • 10 μs of short-circuit withstand time
  • Low VCE(sat) = 1.85 V (typ.) at IC = 15 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Minimized junction temperature: TJ = 175 °C