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STG200M65F2D8AG

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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

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Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameDICE

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key features
  • AEC-Q101 qualified
  • Low-loss series IGBT
  • Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C
  • 6 µs minimum short-circuit withstanding time at TJ = 150 °C