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STG35M120F3D8

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1200 V, 35 A trench gate field-stop M series, low-loss IGBT die in D8 packing

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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeN/A
GradeIndustrial
Package NameDICE SAWN T&R

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features
  • 10 μs of short-circuit withstand time
  • Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C