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    STG3856QTR

    Low voltage 1.0Ω max dual SP3T switch with break-before-make feature

    Parameters
    Operating RangeIndustrial
    Supply Voltage Min Volt1.65
    Supply Voltage Max Volt4.3
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack3
    GradeIndustrial
    Package NameVFQFPN 12 2.2x1.4x0.55
    Description

    The STG3856 is a high-speed CMOS low voltage dual analog SP3T (single pole triple throw) switch or dual 3 : 1 multiplexer /demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applications.The device...
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    Key features
    Key features
    • ESD performance (analog channel vs. GND): HBM > 2 kV (MIL STD 883 method 3015)
    • Latch-up performance exceeds 300 mA (JESD 17)
    • High speed: tPD = 0.3 ns (typ.) at VCC = 3.0 V tPD = 0.4 ns (typ.) at VCC = 2.3 V
    • Low ON resistance VIN = 0 V: RON = 1.0 Ω(max. TA = 25°C) at VCC = 4.3 V RON = 1.5 Ω (max. TA = 25°C) at VCC = 3.0 V RON = 1.8 Ω (max. TA = 25°C) at VCC = 2.3 V
    • Ultra low power dissipation: Icc = 0.2 μA (max.) at TA = 85°C
    • 4.3 V tolerant and 1.8 V compatible threshold on digital control input at VCC = 2.3 to 4.3 V
    • Wide operating voltage range: VCC (opr) = 1.65 V to 4.3 V single supply
    In stock
    Quantity $ per unit Savings
    1-9$1.180%
    10-24$0.8727%
    25-99$0.8132%
    100-249$0.7239%
    250-499$0.6843%
    500$0.6744%
    500 + Contact sales
    $1.18
    $1.18
    Parameters
    Operating RangeIndustrial
    Supply Voltage Min Volt1.65
    Supply Voltage Max Volt4.3
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack3
    GradeIndustrial
    Package NameVFQFPN 12 2.2x1.4x0.55
    Description

    The STG3856 is a high-speed CMOS low voltage dual analog SP3T (single pole triple throw) switch or dual 3 : 1 multiplexer /demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applications.The device...
    Read More

    Key features
    Key features
    • ESD performance (analog channel vs. GND): HBM > 2 kV (MIL STD 883 method 3015)
    • Latch-up performance exceeds 300 mA (JESD 17)
    • High speed: tPD = 0.3 ns (typ.) at VCC = 3.0 V tPD = 0.4 ns (typ.) at VCC = 2.3 V
    • Low ON resistance VIN = 0 V: RON = 1.0 Ω(max. TA = 25°C) at VCC = 4.3 V RON = 1.5 Ω (max. TA = 25°C) at VCC = 3.0 V RON = 1.8 Ω (max. TA = 25°C) at VCC = 2.3 V
    • Ultra low power dissipation: Icc = 0.2 μA (max.) at TA = 85°C
    • 4.3 V tolerant and 1.8 V compatible threshold on digital control input at VCC = 2.3 to 4.3 V
    • Wide operating voltage range: VCC (opr) = 1.65 V to 4.3 V single supply