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STG40H120F2D7

Trench gate field-stop 1200 V, 40 A high-speed H series IGBT in D7 packing

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters....
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Key features
  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V (typ.) @ IC = 40 A
  • Positive VCE(sat) temperature coefficient
  • 5 μs minimum short-circuit withstand time at TJ(sat) = 150 °C
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Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters....
Read More

Key features
  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V (typ.) @ IC = 40 A
  • Positive VCE(sat) temperature coefficient
  • 5 μs minimum short-circuit withstand time at TJ(sat) = 150 °C