STG40H120F2D7

Trench gate field-stop 1200 V, 40 A high-speed H series IGBT in D7 packing

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters....
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Key features

Key features
Maximum junction temperature: T_J= 175 °C High speed switching series Minimized tail current V_CE(sat) = 2.1 V (typ.) @ I_C = 40 A Positive V_CE(sat) temperature coefficient 5 μs minimum short-circuit withstand time at T_J(sat) = 150 °C

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

Key features

Key features
Maximum junction temperature: T_J= 175 °C High speed switching series Minimized tail current V_CE(sat) = 2.1 V (typ.) @ I_C = 40 A Positive V_CE(sat) temperature coefficient 5 μs minimum short-circuit withstand time at T_J(sat) = 150 °C