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STG75H65FB2D7

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in D7 packing

ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 75 A
  • Minimized tail current
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
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ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 75 A
  • Minimized tail current
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient