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STG75H65FB2D7
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in D7 packing
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Not Applicable |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D.SCRIB.100% VI STAT |
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
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| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Not Applicable |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D.SCRIB.100% VI STAT |
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
Read More
|