STG80H65FBD7

Active

650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing

Quantity $ per Unit Savings
1 - 500$0.000%
Contact Sales
Out of stock
$0.00
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT
Key features
  • Maximum junction temperature: TJ = 175 °C
  • High-speed switching series
  • Minimized tail current
  • VCE(sat) = 1.6 V (typ.) @ IC = 80 A
  • Tight parameter distribution
  • Safer paralleling