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    STGAP2GSNC

    STGAP2GSNC

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    Active

    STGAP2GSNCTR

    Isolated 3 A single gate driver for Enhancement mode GaN FETs

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack3
    GradeIndustrial
    Package NameSO-8
    Description

    The STGAP2GSN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power...
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    Key features
    Key features
    • High voltage rail up to 1700 V
    • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
    • dV/dt transient immunity ±100 V/ns
    • Input-output propagation delay: 45 ns
    • Separate sink and source option for easy gate driving configuration
    • UVLO function optimized for GaN
    • Gate driving voltage up to 15 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut-down protection
    • Standby function
    • Narrow body SO-8 package
    In stock
    Quantity $ per unit Savings
    1-9$1.840%
    10-99$1.2532%
    100-249$1.1140%
    250-499$1.0444%
    500$1.0046%
    500 + Contact sales
    $1.84
    $1.84
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack3
    GradeIndustrial
    Package NameSO-8
    Description

    The STGAP2GSN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power...
    Read More

    Key features
    Key features
    • High voltage rail up to 1700 V
    • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
    • dV/dt transient immunity ±100 V/ns
    • Input-output propagation delay: 45 ns
    • Separate sink and source option for easy gate driving configuration
    • UVLO function optimized for GaN
    • Gate driving voltage up to 15 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut-down protection
    • Standby function
    • Narrow body SO-8 package
    Associated products