STGAP2SICDTR

STGAP2SICDTR

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STGAP2SICD

Galvanically isolated 4 A dual gate driver

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack3
GradeIndustrial
Package NameSSOP 32 LEAD 300 MIL PKG .0315 P

The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high...
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Key features
  • High voltage rail up to 1200 V
  • Driver current capability: 4 A sink/source @ 25 °C
  • dV/dt transient immunity ±100 V/ns
  • Overall input-output propagation delay: 75 ns
  • Separate sink and source option for easy gate driving configuration
  • 4 A Miller CLAMP
  • UVLO function
  • Configurable interlocking function
  • Dedicated SD and BRAKE pins
  • Gate driving voltage up to 26 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shutdown protection
  • Standby function
  • 6 kV galvanic isolation
  • Wide Body SO-36W
  • UL 1577 recognized
Out of Stock
Quantity $ per unit Savings
1-9$4.190%
10-24$3.7610%
25-99$3.5615%
100-249$3.0926%
250-499$2.9230%
500$2.6337%
Contact sales
$4.19
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack3
GradeIndustrial
Package NameSSOP 32 LEAD 300 MIL PKG .0315 P

The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high...
Read More

Key features
  • High voltage rail up to 1200 V
  • Driver current capability: 4 A sink/source @ 25 °C
  • dV/dt transient immunity ±100 V/ns
  • Overall input-output propagation delay: 75 ns
  • Separate sink and source option for easy gate driving configuration
  • 4 A Miller CLAMP
  • UVLO function
  • Configurable interlocking function
  • Dedicated SD and BRAKE pins
  • Gate driving voltage up to 26 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shutdown protection
  • Standby function
  • 6 kV galvanic isolation
  • Wide Body SO-36W
  • UL 1577 recognized