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Galvanically isolated 4 A dual gate driver
The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high... Read More
The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high power applications such as power conversion and industrial motor drivers inverters. The separated output pins allow to independently optimize turn-on and turn-off by using dedicated gate resistors, while the Miller CLAMP function allows avoiding gate spikes during fast commutations in half-bridge topologies. The device integrates protection functions: dedicated SD and BRAKE pins are available, UVLO and thermal shutdown are included to easily design high reliability systems. In half-bridge topologies the interlocking function prevents outputs from being high at the same time, avoiding shoot-through conditions in case of wrong logic input commands. The interlocking function can be disabled by a dedicated configuration pin, allowing independent and parallel operation of the two channels. The input to output propagation delay results are contained within 75 ns, providing high PWM control accuracy. A standby mode is available in order to reduce idle power consumption.
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