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    STGAP2SICS

    STGAP2SICS

    STGAP2SICSTR

    STGAP2SICSTR

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    STGAP2SICSC

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    Galvanically isolated 4 A single gate driver for SiC MOSFETs
    Learn More about STGAP2SICSC

    Quantity $ per Unit Savings
    1 - 9$2.950%
    10 - 24$2.6510%
    25 - 99$2.5115%
    100 - 249$2.1826%
    250 - 499$2.0630%
    500$1.8537%
    500 + Contact Sales
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    In stock
    $2.95
    Parameter NameParameter Value
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameSO 8 WIDE 300
    Key features
    • High voltage rail up to 1200 V
    • Driver current capability: 4 A sink/source @25°C
    • dV/dt transient immunity ±100 V/ns in full temperature range
    • Overall input-output propagation delay: 75 ns
    • Separate sink and source option for easy gate driving configuration
    • 4 A Miller CLAMP dedicated pin option
    • UVLO function
    • Gate driving voltage up to 26 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shut-down protection
    • Standby function
    • 6 kV galvanic isolation
    • Wide body SO-8W package
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