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    STGAP3SXITR

    STGAP3SXITR

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    STGAP3SXI

    Galvanically isolated gate driver for IGBTs with 10 A Source/Sink current, desaturation protection and adjustable SOFTOFF

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-16W
    Description

    The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The platform includes different options with 10 A and 6 A current capability, each of which is available with dedicated UVLO...
    Read More

    Key features
    Key features
    • High voltage rail up to 1200 V
    • Driver current capability: 6/10 A sink/source @25 °C
    • ±200 V/ns Common Mode Transient Immunity (CMTI)
    • 75 ns input-output propagation delay
    • Miller CLAMP driver for external N-channel MOSFET 0.3 A source/0.5 A sink
    • Adjustable soft turn-off function
    • VDD UVLO
    • VH UVLO: IGBT and SiC variants
    • Desaturation protection: IGBT and SiC variants
    • Gate driving voltage up to 32 V
    • Negative gate driving voltage up to -10 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shutdown protection
    • Reinforced galvanic isolation:
      • Isolation voltage VISO =
        5.7 kVRMS (UL 1577)
      • Transient Overvoltage VIOTM =
        8 kVPEAK (IEC 60747-17)
      • Max. Repetitive Isolation Voltage VIORM =
        1.2 kVPEAK (IEC 60747-17)
    • Wide body SO-16W package
    Out of Stock
    Quantity $ per unit Savings
    1-500$5.630%
    500 + Contact sales
    $5.63
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-16W
    Description

    The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The platform includes different options with 10 A and 6 A current capability, each of which is available with dedicated UVLO...
    Read More

    Key features
    Key features
    • High voltage rail up to 1200 V
    • Driver current capability: 6/10 A sink/source @25 °C
    • ±200 V/ns Common Mode Transient Immunity (CMTI)
    • 75 ns input-output propagation delay
    • Miller CLAMP driver for external N-channel MOSFET 0.3 A source/0.5 A sink
    • Adjustable soft turn-off function
    • VDD UVLO
    • VH UVLO: IGBT and SiC variants
    • Desaturation protection: IGBT and SiC variants
    • Gate driving voltage up to 32 V
    • Negative gate driving voltage up to -10 V
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Temperature shutdown protection
    • Reinforced galvanic isolation:
      • Isolation voltage VISO =
        5.7 kVRMS (UL 1577)
      • Transient Overvoltage VIOTM =
        8 kVPEAK (IEC 60747-17)
      • Max. Repetitive Isolation Voltage VIORM =
        1.2 kVPEAK (IEC 60747-17)
    • Wide body SO-16W package