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STGAP3SXSTR

STGAP3SXSTR

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STGAP3SXS

Galvanically isolated gate driver for SiC MOSFETs with 10 A Source/Sink current, desaturation protection and adjustable SOFTOFF

Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-16W

The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The platform includes different options with 10 A and 6 A current capability, each of which is available with dedicated UVLO...
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Key features
  • High voltage rail up to 1200 V
  • Driver current capability: 6/10 A sink/source @25 °C
  • ±200 V/ns Common Mode Transient Immunity (CMTI)
  • 75 ns input-output propagation delay
  • Miller CLAMP driver for external N-channel MOSFET 0.3 A source/0.5 A sink
  • Adjustable soft turn-off function
  • VDD UVLO
  • VH UVLO: IGBT and SiC variants
  • Desaturation protection: IGBT and SiC variants
  • Gate driving voltage up to 32 V
  • Negative gate driving voltage up to -10 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shutdown protection
  • Reinforced galvanic isolation:
    • Isolation voltage VISO =
      5.7 kVRMS (UL 1577)
    • Transient Overvoltage VIOTM =
      8 kVPEAK (IEC 60747-17)
    • Max. Repetitive Isolation Voltage VIORM =
      1.2 kVPEAK (IEC 60747-17)
  • Wide body SO-16W package
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Operating RangeIndustrial
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameSO-16W

The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.The platform includes different options with 10 A and 6 A current capability, each of which is available with dedicated UVLO...
Read More

Key features
  • High voltage rail up to 1200 V
  • Driver current capability: 6/10 A sink/source @25 °C
  • ±200 V/ns Common Mode Transient Immunity (CMTI)
  • 75 ns input-output propagation delay
  • Miller CLAMP driver for external N-channel MOSFET 0.3 A source/0.5 A sink
  • Adjustable soft turn-off function
  • VDD UVLO
  • VH UVLO: IGBT and SiC variants
  • Desaturation protection: IGBT and SiC variants
  • Gate driving voltage up to 32 V
  • Negative gate driving voltage up to -10 V
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Temperature shutdown protection
  • Reinforced galvanic isolation:
    • Isolation voltage VISO =
      5.7 kVRMS (UL 1577)
    • Transient Overvoltage VIOTM =
      8 kVPEAK (IEC 60747-17)
    • Max. Repetitive Isolation Voltage VIORM =
      1.2 kVPEAK (IEC 60747-17)
  • Wide body SO-16W package