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STGB10H60DF

Active

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Quantity $ per Unit Savings
1 - 9$1.960%
10 - 24$1.7610%
25 - 99$1.6715%
100 - 499$1.4228%
500$1.1741%
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Out of stock
$1.96
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameD2PAK

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features
  • High speed switching
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Short-circuit rated
  • Ultrafast soft recovery antiparallel diode