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    STGB20V60F

    NRND

    Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
    Learn More about STGB20V60F

    Quantity $ per Unit Savings
    1 - 9$2.000%
    10 - 24$1.7910%
    25 - 50$1.7015%
    50 + Contact Sales
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    In stock
    $2.00
    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK

    This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key features
    • Maximum junction temperature: TJ= 175 °C
    • Very high speed switching series
    • Tail-less switching off
    • Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Lead free package