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STGB20V60F

NRND

Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Quantity $ per Unit Savings
1 - 9$2.000%
10 - 24$1.7910%
25 - 50$1.7015%
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In stock
$2.00
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features
  • Maximum junction temperature: TJ= 175 °C
  • Very high speed switching series
  • Tail-less switching off
  • Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Lead free package