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    STGB40H65FB

    Trench gate field-stop 650 V, 40 A high speed HB series IGBT

    Parameters
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK
    Description

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
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    Key features
    Key features
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
    • Tight parameter distribution
    • Safe paralleling
    • Low thermal resistance
    In stock
    Quantity $ per unit Savings
    1-500$3.520%
    500 + Contact sales
    $3.52
    $3.52
    Parameters
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK
    Description

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
    Read More

    Key features
    Key features
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
    • Tight parameter distribution
    • Safe paralleling
    • Low thermal resistance