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    STGB6M65DF2

    Trench gate field-stop IGBT M series, 650 V 6 A low loss

    Parameters
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK
    Description

    This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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    Key features
    Key features
    • 6 μs of minimum short-circuit withstand time
    • Low VCE(sat) = 1.55 V (typ.) at IC = 6 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast-recovery antiparallel diode
    Out of Stock
    Quantity $ per unit Savings
    1-500$1.280%
    500 + Contact sales
    $1.28
    Parameters
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK
    Description

    This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
    Read More

    Key features
    Key features
    • 6 μs of minimum short-circuit withstand time
    • Low VCE(sat) = 1.55 V (typ.) at IC = 6 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast-recovery antiparallel diode