STGF20H65DFB2

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220FP

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
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Key features

Key features
Maximum junction temperature : T_J = 175 °C Low V_CE(sat) = 1.65 V (typ.) @ I_C = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient

Out of Stock

Quantity	$ per unit	Savings
1-9	$2.52	0%
10-14	$2.17	14%
14 +	Contact sales

$2.52

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220FP

Description

Key features

Key features
Maximum junction temperature : T_J = 175 °C Low V_CE(sat) = 1.65 V (typ.) @ I_C = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient