STGF20H65DFB2 Active
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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-220FP
Key Features
  • Maximum junction temperature : TJ = 175 °C
  • Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
  • Very fast and soft recovery co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

In stock:
$1.68
or
Range Unit Price Savings
1 - 9$1.680%
10 - 99$1.4215%
100 - 499$1.1134%
500$0.9444%
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