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    STGF6M65DF2

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    Trench gate field-stop IGBT M series, 650 V 6 A low loss
    Learn More about STGF6M65DF2

    Quantity $ per Unit Savings
    1 - 9$1.490%
    10 - 24$1.3410%
    25 - 99$1.2714%
    100 - 499$1.0530%
    500$0.8642%
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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameTO-220FP

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key features
    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode