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STGFW20V60DF

Active

Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Quantity $ per Unit Savings
1 - 9$3.000%
10 - 24$2.7010%
25 - 30$2.5515%
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In stock
$3.00
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameTO-3PF

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Tail-less switching off
  • VCE(sat) = 1.8 V (typ.) @ IC = 20 A
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode