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STGH30H65DFB-2AG

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Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package

Quantity $ per Unit Savings
1 - 9$3.730%
10 - 24$3.3610%
25 - 99$3.1815%
100 - 499$2.7526%
500$2.3437%
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In stock
$3.73
Parameter NameParameter Value
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameH2PAK-2

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features
  • AEC-Q101 qualified
  • High-speed switching series
  • Maximum junction temperature: TJ = 175 °C
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Safer paralleling
  • Tight parameter distribution
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode