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STGHU30M65DF2AG

Automotive-grade trench gate field-stop IGBT M series, 650 V, 30 A low-loss M series IGBT in an HU3PAK package

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameHU3PAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features
  • AEC-Q101 qualified
  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 30 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast-recovery antiparallel diode
  • Excellent switching performance thanks to the extra driving kelvin pin
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Quantity $ per unit Savings
1-9$3.280%
10-24$2.7516%
25-99$2.6121%
100-249$2.2332%
250-500$2.1136%
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$3.28
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameHU3PAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • AEC-Q101 qualified
  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 30 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast-recovery antiparallel diode
  • Excellent switching performance thanks to the extra driving kelvin pin