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STGIPQ3H60T-HL

SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT

Target Application3-phase Induction Motor (ACIM)
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameN2DIP-26L

This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate...
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Key features
  • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
  • 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors
  • Internal bootstrap diode
  • Optimized for low electromagnetic interference
  • Undervoltage lockout
  • VCE(SAT) negative temperature coefficient
  • Shutdown function
  • Interlocking function
  • Op-amp for advanced current sensing
  • Comparator for fault protection against overcurrent
  • NTC (UL 1434 CA 2 and 4)
  • Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
  • Isolation ratings of 1800 Vrms/min.
  • UL recognition: UL 1557, file E81734
In stock
Quantity $ per unit Savings
1-9$8.810%
10-24$7.5614%
25-99$7.5015%
100-249$7.3517%
250-359$7.3117%
360-500$5.5537%
Contact sales
$8.81
$8.81
Target Application3-phase Induction Motor (ACIM)
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameN2DIP-26L

This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate...
Read More

Key features
  • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
  • 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors
  • Internal bootstrap diode
  • Optimized for low electromagnetic interference
  • Undervoltage lockout
  • VCE(SAT) negative temperature coefficient
  • Shutdown function
  • Interlocking function
  • Op-amp for advanced current sensing
  • Comparator for fault protection against overcurrent
  • NTC (UL 1434 CA 2 and 4)
  • Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
  • Isolation ratings of 1800 Vrms/min.
  • UL recognition: UL 1557, file E81734