STGP10M65DF2

Name: STGP10M65DF2
Brand: STMicroelectronics
SKU: STGP10M65DF2
Price: 1.76 USD
Availability: OutOfStock

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Trench gate field-stop IGBT M series, 650 V 10 A low loss
Learn More about STGP10M65DF2

Quantity	$ per Unit	Savings
1 - 9	$1.76	0%
10 - 24	$1.53	13%
25 - 60	$1.45	18%
60 +	Contact Sales

Out of stock

$1.76

Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features

Key features
6 µs of short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 10 A Tight parameter distribution Safer paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: T_J = 175 °C

STGP10M65DF2

Active

Trench gate field-stop IGBT M series, 650 V 10 A low loss Learn More about STGP10M65DF2

Trench gate field-stop IGBT M series, 650 V 10 A low loss
Learn More about STGP10M65DF2