STGP10M65DF2

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
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Key features

Key features
6 µs of short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 10 A Tight parameter distribution Safer paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: T_J = 175 °C

In stock

Quantity	$ per unit	Savings
1-9	$1.34	0%
10-60	$1.10	18%
60 +	Contact sales

$1.34

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-220

Description

Key features

Key features
6 µs of short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 10 A Tight parameter distribution Safer paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: T_J = 175 °C