STGP15M65DF2

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Trench gate field-stop IGBT M series, 650 V, 15 A low loss
Learn More about STGP15M65DF2

Quantity	$ per Unit	Savings
1 - 9	$2.56	0%
10 - 24	$2.30	10%
25 - 99	$2.18	15%
100 - 499	$1.85	28%
500	$1.52	41%
500 +	Contact Sales

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$2.56

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Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
ROHS Compliance Grade	Ecopack2
Grade	Industrial
Package Name	TO-220

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features

Key features
6 μs of short-circuit withstand time V_CE(sat)= 1.55 V (typ.) @ I_C = 15 A Tight parameter distribution Safer paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: T_J = 175 °C

STGP15M65DF2

Active

Trench gate field-stop IGBT M series, 650 V, 15 A low loss Learn More about STGP15M65DF2

Trench gate field-stop IGBT M series, 650 V, 15 A low loss
Learn More about STGP15M65DF2