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STGP6M65DF2

Trench gate field-stop IGBT M series, 650 V 6 A low loss

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
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Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
In stock
Quantity $ per unit Savings
1-9$1.300%
10-99$1.0519%
100-499$0.8336%
500$0.7046%
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$1.30
$1.30
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
Read More

Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode