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STGSB200M65DF2AG

Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in an ACEPACK SMIT package

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameACEPACK SMIT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features
  • AEC-Q101 qualified
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 200 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Maximum junction temperature: TJ = 175 °C
  • Dice on direct bond copper (DBC) substrate
  • Isolation rating of 3400 Vrms/min
  • UL recognition: UL 1557 file E81734
In stock
Quantity $ per unit Savings
1-9$22.540%
10-24$20.0311%
25-49$18.6917%
50-99$18.1020%
100$17.5222%
Contact sales
$22.54
$22.54
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameACEPACK SMIT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • AEC-Q101 qualified
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 200 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Maximum junction temperature: TJ = 175 °C
  • Dice on direct bond copper (DBC) substrate
  • Isolation rating of 3400 Vrms/min
  • UL recognition: UL 1557 file E81734