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STGSH80HB65DAG

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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameACEPACK SMIT

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

Key features
  • AQG 324 qualified
  • High-speed switching series
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.6 V (typ.) @ IC = 65 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance thanks to DBC substrate
  • Positive temperature VCE(sat) coefficient
  • Soft and very fast recovery antiparallel diode