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STGSH80HB65DAG

Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameACEPACK SMIT

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop...
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Key features
  • AQG 324 qualified
  • High-speed switching series
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance thanks to DBC substrate
  • Positive temperature VCE(sat) coefficient
  • Soft and very fast recovery antiparallel diode
  • Isolation rating of 3.4 kVrms/min
In stock
Quantity $ per unit Savings
1-9$22.920%
10-24$20.3611%
25-49$19.0017%
50$18.4020%
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$22.92
$22.92
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameACEPACK SMIT

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop...
Read More

Key features
  • AQG 324 qualified
  • High-speed switching series
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance thanks to DBC substrate
  • Positive temperature VCE(sat) coefficient
  • Soft and very fast recovery antiparallel diode
  • Isolation rating of 3.4 kVrms/min