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STGST200G65DFAG

Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeAutomotive
Package NameSTPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and...
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Key features
  • AEC-Q101 qualified
  • VCE(sat) = 1.52 V (typ.) @ IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Low thermal resistance
  • Very fast and soft recovery antiparallel diode
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Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeAutomotive
Package NameSTPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and...
Read More

Key features
  • AEC-Q101 qualified
  • VCE(sat) = 1.52 V (typ.) @ IC = 200 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Low thermal resistance
  • Very fast and soft recovery antiparallel diode