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STGW10M65DF2

Active

Trench gate field-stop IGBT M series, 650 V 10 A low loss

Quantity $ per Unit Savings
1 - 9$1.840%
10 - 24$1.6610%
25 - 99$1.5615%
100 - 500$1.3328%
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Out of stock
$1.84
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-247
Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 10 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C