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STGW15H120DF2

Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V @ IC = 15 A
  • 5 μs minimum short circuit withstand time at TJ = 150 °C
  • Safe paralleling
  • Low thermal resistance
  • Very fast recovery antiparallel diode
In stock
Quantity $ per unit Savings
1-9$3.570%
10-40$3.0016%
Contact sales
$3.57
$3.57
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V @ IC = 15 A
  • 5 μs minimum short circuit withstand time at TJ = 150 °C
  • Safe paralleling
  • Low thermal resistance
  • Very fast recovery antiparallel diode