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    STGW15H120DF2

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    Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
    Learn More about STGW15H120DF2

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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key features
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 2.1 V @ IC = 15 A
    • 5 μs minimum short circuit withstand time at TJ = 150 °C
    • Safe paralleling
    • Low thermal resistance
    • Very fast recovery antiparallel diode