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    STGW15M120DF3

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    Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
    Learn More about STGW15M120DF3

    Quantity $ per Unit Savings
    1 - 9$6.640%
    10 - 24$5.9610%
    25 - 99$5.6415%
    100 - 500$4.8926%
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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key features
    • 10 μs of short-circuit withstand time
    • VCE(sat)= 1.85 V (typ.) @ IC= 15 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and fast recovery antiparallel diode