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    STGW20H65FB

    NRND

    Trench gate field-stop 650 V, 20 A high speed HB series IGBT
    Learn More about STGW20H65FB

    Quantity $ per Unit Savings
    1 - 9$3.230%
    10 - 24$2.9110%
    25 - 99$2.7415%
    100 - 500$2.3826%
    500 + Contact Sales
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    In stock
    $3.23
    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key features
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 1.55 V (typ.) @ IC = 20 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance