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    STGW20V60DF

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    Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
    Learn More about STGW20V60DF

    Quantity $ per Unit Savings
    1 - 9$3.820%
    10 - 24$3.4410%
    25 - 99$3.2515%
    100 - 249$2.8825%
    250 - 325$2.8126%
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    In stock
    $3.82
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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247

    This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key features
    • Maximum junction temperature: TJ= 175 °C
    • Very high speed switching series
    • Tail-less switching off
    • Low saturation voltage: VCE(sat)= 1.8 V (typ.) @ IC= 20 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode
    • Lead free package