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    STGW25M120DF3

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    Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
    Learn More about STGW25M120DF3

    Quantity $ per Unit Savings
    1 - 9$7.040%
    10 - 24$6.3610%
    25 - 99$6.0714%
    100 - 249$5.2725%
    250 - 500$4.6035%
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    In stock
    $7.04
    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

    Key features
    • Maximum junction temperature: TJ = 175 °C
    • 10 μs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
    • Tight parameter distribution
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Soft- and fast-recovery antiparallel diode