Shipping Delay: Due to the backlog of orders caused by severe weather, order processing and shipping may be delayed. Thank you for understanding!

NRND

STGW30M65DF2

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential....
Read More

Key features
  • 6 μs of minimum short-circuit withstand time
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast-recovery antiparallel diode
In stock
Quantity $ per unit Savings
1-9$3.531%
10-99$1.9346%
100-500$1.3163%
Contact sales
$3.53
Special Price $3.53 Regular Price $3.55
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential....
Read More

Key features
  • 6 μs of minimum short-circuit withstand time
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast-recovery antiparallel diode