STGW30M65DF2 Active

Trench gate field-stop IGBT M series, 650 V 30 A low loss
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-247
Key Features
  • 6 µs of minimum short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Out of stock
$2.88
Range Unit Price Savings
1 - 9$2.880%
10 - 99$2.4515%
100 - 249$1.9433%
250 - 499$1.6941%
500$1.6045%
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