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STGW30M65DF2

Name: STGW30M65DF2
Brand: STMicroelectronics
SKU: STGW30M65DF2
Price: 3.3 USD
Availability: OutOfStock

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Trench gate field-stop IGBT M series, 650 V 30 A low loss
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Quantity	$ per Unit	Savings
1 - 9	$3.30	0%
10 - 24	$2.97	10%
25 - 30	$2.89	12%
30 +	Contact Sales

Out of stock

$3.30

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Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-247

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features

Key features
6 µs of minimum short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode

STGW30M65DF2

Active

Trench gate field-stop IGBT M series, 650 V 30 A low loss Learn More about STGW30M65DF2

Trench gate field-stop IGBT M series, 650 V 30 A low loss
Learn More about STGW30M65DF2