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    STGW60H65DFB

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    Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
    Learn More about STGW60H65DFB

    Quantity $ per Unit Savings
    1 - 9$5.890%
    10 - 24$5.3010%
    25 - 99$5.0115%
    100 - 500$4.3426%
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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247

    These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key features
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
    • Tight parameter distribution
    • Safe paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode