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    STGW60H65FB

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    Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
    Learn More about STGW60H65FB

    Quantity $ per Unit Savings
    1 - 9$5.400%
    10 - 99$4.8610%
    100 - 500$3.9826%
    500 + Contact Sales
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    Out of stock
    $5.40
    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247

    This device is an IGBT developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key features
    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat)= 1.6 V (typ.) @ IC= 60 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance