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STGWA30M65DF2

STGWA30M65DF2

STGW30M65DF2

STGW30M65DF2

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STGW75M65DF2

Trench gate field-stop IGBT M series, 650 V 75 A low loss

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential....
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Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 75 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C
Out of Stock
Quantity $ per unit Savings
1-9$5.580%
10-24$5.168%
25-99$4.5618%
100-120$4.1326%
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$5.58
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential....
Read More

Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 75 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C