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STGW80H65DFB-4

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO247-4

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching...
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Key features
  • VCE(sat) = 1.6 V (typ.) @ IC = 80 A
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Excellent switching performance thanks to the extra driving kelvin pin
In stock
Quantity $ per unit Savings
1-500$7.700%
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$7.70
$7.70
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO247-4

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching...
Read More

Key features
  • VCE(sat) = 1.6 V (typ.) @ IC = 80 A
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Excellent switching performance thanks to the extra driving kelvin pin