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STGWA100H65DFB2

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Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package
Learn More about STGWA100H65DFB2

Quantity	$ per Unit	Savings
1 - 9	$7.05	0%
10 - 20	$6.38	10%
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Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-247 long leads

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V_CE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Key features

Key features
Maximum junction temperature: T_J = 175 °C Low V_CE(sat) = 1.55 V (typ.) @ I_C = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient

STGWA100H65DFB2

Active

Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package Learn More about STGWA100H65DFB2

Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package
Learn More about STGWA100H65DFB2