JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.
📢 Special June promo: $5.99 worldwide delivery until June 30th! No code or minimum order required. Shop now! 🛒
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
