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STGWA40H65DHFB2

Active

Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package

Quantity $ per Unit Savings
1 - 9$3.830%
10 - 24$3.4510%
25 - 99$3.2515%
100 - 249$2.8226%
250 - 500$2.6830%
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Out of stock
$3.83
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-247 long leads

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery half-rated diode is co-packaged in antiparallel with the IGBT.


The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
  • Soft and very fast recovery half-rated co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient