STGWT80H65DFB

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-3P

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
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Key features

Key features
Maximum junction temperature: T_J = 175 °C High speed switching series Minimized tail current Low saturation voltage: V_CE(sat) = 1.6 V (typ.) @ I_C = 80 A Tight parameter distribution Safe paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Very fast soft recovery antiparallel diode

In stock

Quantity	$ per unit	Savings
1-9	$5.22	0%
10-20	$5.08	3%
20 +	Contact sales

$5.22

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO-3P

Description

Key features

Key features
Maximum junction temperature: T_J = 175 °C High speed switching series Minimized tail current Low saturation voltage: V_CE(sat) = 1.6 V (typ.) @ I_C = 80 A Tight parameter distribution Safe paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Very fast soft recovery antiparallel diode