STGWT80H65DFB Active
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Trench gate field-stop 650 V, 80 A high speed HB series IGBT
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2 (**)
GradeIndustrial
Package NameTO-3P
Key Features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

In stock:
$6.15
or
Range Unit Price Savings
1 - 9$6.150%
10 - 99$5.776%
100 - 249$4.3230%
250 - 499$4.1932%
500$3.7140%
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