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    STGYA120M65DF2AG

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    Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package
    Learn More about STGYA120M65DF2AG

    Quantity $ per Unit Savings
    1 - 9$12.800%
    10 - 24$11.778%
    25 - 99$11.2812%
    100 - 500$9.9422%
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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameMax247 long leads

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

    Key features
    • AEC-Q101 qualified
    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
    • Tight parameter distribution
    • Safer paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode
    • Maximum junction temperature: TJ = 175 °C