STGYA75H120DF2

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Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package

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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameMax247 long leads

This device is IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features
  • Maximum junction temperature: TJ = 175 °C
  • 5 μs of short-circuit withstand time
  • VCE(sat) = 2.1 V (typ.) @ IC = 75 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast recovery antiparallel diode