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STH12N120K5-2

N-channel 1200 V, 620 mOhm typ., 12 A MDmesh K5 Power MOSFET in an H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected
In stock
Quantity $ per unit Savings
1-9$12.490%
10-99$8.6830%
100-500$6.9544%
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$12.49
$12.49
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected