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STH12N120K5-2

N-channel 1200 V, 620 mOhm typ., 12 A MDmesh K5 Power MOSFET in an H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected
In stock
Quantity $ per unit Savings
1-9$11.480%
10-99$9.3419%
100-499$7.7832%
500$6.9440%
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$11.48
$11.48
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected